AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth
AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth
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AlGaAs/GaAs 自对准 LD 通过气相蚀刻和随后的 MOVPE 再生长工艺制造
DOI：
10.1109/jqe.1987.1073412
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发表时间：
1987
影响因子：
2.5
通讯作者：
T. Suzuki
中科院分区：
文献类型：
--
作者：
M. Nido;I. Komazaki;K. Kobayashi;K. Endo;M. Ueno;T. Kamejima;T. Suzuki
首次将一种新的制造工艺成功地应用于AlGaAs/GaAs激光二极管。这一新工艺包括气相刻蚀和随后的MOVPE再生长。用该工艺制作的自对准半导体激光器具有足够好的特性(iT=50~60 mA，ETAD=40~45%)和良好的可靠性(至少1000小时内不退化：50°C，5 mW，自动功率控制模式)。
A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD's fabricated by this process have shown sufficiently good characteristics ( Ith = 50-60 mA, \eta_{D} = 40-45 percent), and good reliability (no degradation at least up to 1000 h:50°C, 5mW, automatic power control mode).