Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities
Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities
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DOI：
10.1002/adma.200800558
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发表时间：
2008-09-17
影响因子：
29.4
通讯作者：
Nakamura, Takayoshi
中科院分区：
文献类型：
--
作者：
Noro, Shin-ichiro;Takenobu, Taishi;Nakamura, Takayoshi
高和平衡的流动性：金属有机薄膜晶体管（MOTFT），采用金属配合物与窄带隙和较少的π共轭结构的制造。这些器件显示出高性能的双极特性与其他报道的单组分双极TFT相比。
High and balanced mobilities: Metal-organic thin-film transistors (MOTFTs) that employ metal complexes with narrow band gaps and less pi-conjugated structures are fabricated. These devices show high-performance ambipolar characteristics in comparison with other reported single-component ambipolar TFTs.