Evolution of cellular structures during Ge 1-x Si x single-crystal growth by means of a modified phase-field method.
Evolution of cellular structures during Ge 1-x Si x single-crystal growth by means of a modified phase-field method.
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利用改进的相场方法研究 Ge 1-x Si x 单晶生长过程中胞状结构的演化。
DOI：
10.1103/physreve.81.051604
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
D. Stock
中科院分区：
文献类型：
--
作者：
W. Miller;I. Rasin;D. Stock
研究了Ge_（1-x）Si_x单晶生长中胞状结构随工艺参数的变化规律。由于这些结构比金属凝固过程中发生的结构大得多，我们开发了一种改进的相场法，它能够使用真实的材料参数在合理的计算机时间内处理这些结构。该模型已被测试用于计算晶体的平衡形状，枝晶生长，和细胞生长的NixCu 1-x。我们还进行了经典的分子动力学计算，以计算在各种组成的熔体中的Si和Ge的扩散系数。
We have studied the evolution of cellular structures in Ge 1-x Si x single-crystal growth as a function of process parameters. Because these structures are much larger than those occurring during the solidification of metals, we developed a modified phase-field method, which is able to handle these structure within reasonable computer times using the real material parameters. The model has been tested for computing equilibrium shapes of crystals, dendritic growth, and cellular growth of Ni x Cu 1-x. We also performed classical molecular dynamics calculations in order to compute the diffusion coefficients of Si and Ge in melts of various compositions.