Buried structure for increasing fabrication performance of micromaterial by electromigration
Buried structure for increasing fabrication performance of micromaterial by electromigration
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DOI：
10.7567/jjap.55.06gh01
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发表时间：
2016-04
影响因子：
1.5
通讯作者：
Y. Kimura;M. Saka
中科院分区：
文献类型：
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作者：
Y. Kimura;M. Saka
电迁移(EM)技术是微/纳米材料的物理合成生长方法。电磁通过高密度的电子流在金属线中引起原子扩散。通过EM有意控制原子的聚集和松弛，可以制造出微/纳米材料。在EM技术中，锡钝化被用作样品的一种成分。虽然TiN钝化可以简化制备样品的繁琐过程，但由于TiN的导电性作为副作用，自然会发生漏电流，降低了微/纳米材料的制造性能。在本工作中，我们提出了一种掩埋结构，它通过限制电磁技术中的电流流动来显著降低制备铝微材料的电流。根据采用埋层结构和具有漏电流的先前结构制备铝微材料的阈值电流，评估了该材料的制备性能。
The electromigration (EM) technique is a physical synthetic growth method for micro/nanomaterials. EM causes atomic diffusion in a metal line by high-density electron flows. The intentional control of accumulation and relaxation of atoms by EM can lead to the fabrication of a micro/nanomaterial. TiN passivation has been utilized as a component of sample in the EM technique. Although TiN passivation can simplify the cumbersome processes for preparing the sample, the leakage of current naturally occurs because of the conductivity of TiN as a side effect and decreases the performance of micro/nanomaterial fabrication. In the present work, we propose a buried structure, which contributes to significantly decreasing the current for fabricating an Al micromaterial by confining the current flow in the EM technique. The fabrication performance was evaluated based on the threshold current for fabricating an Al micromaterial using the buried structure and the previous structure with the leakage of current.