Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
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SiC 中 p 型掺杂剂和碳间隙配合物的理论研究：双稳态、负 U 缺陷
DOI：
10.4028/www.scientific.net/msf.483-485.519
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
W. J. Choyke
中科院分区：
文献类型：
--
作者：
Á. Gali;T. Hornos;P. Deák;N. T. Son;E. Janzén;W. J. Choyke
用第一性原理计算方法研究了硼和铝与间隙碳的相互作用。结果表明，碳可以与Al和B形成非常稳定的复合物，形成具有深能级的负U型缺陷族。讨论了这种效应对p型注入激活率的影响。
Interaction of boron and aluminum with interstitial carbon is studied using first principles calculations. It is shown that carbon can form very stable complexes with Al and B, forming a family of negative-U bistable defects with deep levels. The influence of this effect on the activation rate of p-type implants is discussed.