Properties of TiN films deposited at low temperature in a new plasma‐based deposition system
Properties of TiN films deposited at low temperature in a new plasma‐based deposition system
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DOI：
10.1063/1.363704
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发表时间：
1996-12
影响因子：
3.2
通讯作者：
N. Hoang;D. Mckenzie;W. McFall;Y. Yin
中科院分区：
文献类型：
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作者：
N. Hoang;D. Mckenzie;W. McFall;Y. Yin
在螺旋激活反应蒸发系统的新配置中，在低于130 °C下沉积化学计量的氮化钛（TiN）膜。一个在原位椭偏仪被用来监测生长过程中的薄膜的光学性能。薄膜的应力，晶格参数，表面粗糙度，微晶尺寸和择优取向进行了研究作为衬底偏压的函数，因此入射物种的离子能量。本征应力对离子能量的依赖性显示了各种材料也显示的预期结果，并且与Davis的理论模型[Thin Solid Films 226，30（1993）]很好地一致。通过测量晶格参数证实了在−50 V偏压下的高应力水平。X射线衍射测量表明，垂直于衬底表面的（111）择优取向与薄膜的应力水平密切相关。通过将我们的结果与其他一些报道的在更高衬底温度下的研究结果相关联，我们得出结论...
Stoichiometric titanium nitride (TiN) films were deposited at less than 130 °C in a new configuration of the helicon activated reactive evaporation system. An in situ ellipsometer was used to monitor the optical properties of the films during growth. The film stress, lattice parameter, surface roughness, crystallite size, and preferred orientation were investigated as a function of substrate bias and hence ion energy of the incident species. The intrinsic stress dependence on ion energy shows the expected result also shown by a variety of materials and is in good agreement with the theoretical model of Davis [Thin Solid Films 226, 30 (1993)]. The high stress level at −50 V bias is confirmed by measurement of lattice parameter. X‐ray‐diffraction measurements show that the (111)‐preferred orientation normal to the substrate surface correlates strongly with the stress level of the films. By correlating our results with those from a number of other reported studies at higher substrate temperature we conclude ...