A charge-control model of the pin diode
A charge-control model of the pin diode
复制标题
Pin二极管的充电控制模型
DOI：
10.1109/t-ed.1976.18561
复制
发表时间：
1976
影响因子：
3.1
通讯作者：
J. Muller
中科院分区：
文献类型：
--
作者：
K. Schunemann;J. Muller
PIN二极管的电荷控制模型的开发，充分占额外的接触层存储电荷。存储电荷的这一部分被示出极大地影响正向稳态和关断瞬态（开关时间和过渡损耗）。该模型只需要有限的数学工作，似乎非常适合于分析复杂的微波网络与pin二极管，如移相器，限制器和频率转换器。正如数值结果所示，对于某些应用，可能存在最佳i层宽度。
A charge-control model of the pin diode is developed which fully accounts for the additional contact-layer storage charges. This part of the storage charge is shown to greatly influence both the forward steady state and the turn-off transient (switching time and transition-loss). Needing limited mathematical efforts, the model seems well suited for analysis of complicated microwave networks with pin diodes, such as phase shifters, limiters, and frequency converters. As is demonstrated by numerical results, an optimal i-layer width may exist for certain applications.