Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
Comparative study of surface recombination in hexagonal GaN and ZnO surfaces
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DOI：
10.1063/1.4752429
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发表时间：
2012-09
影响因子：
3.2
通讯作者：
T. Onuma;Naoyuki Sakai;T. Igaki;T. Yamaguchi;A. Yamaguchi;T. Honda
中科院分区：
文献类型：
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作者：
T. Onuma;Naoyuki Sakai;T. Igaki;T. Yamaguchi;A. Yamaguchi;T. Honda
采用稳态和时间分辨光致发光（PL）测量方法对GaN和ZnO晶体中的表面复合进行了比较研究。对各种表面取向（+c，-c和m平面表面）进行测量，测得的PL强度和寿命显示出对表面取向的明显依赖性。的依赖性清楚地表明，表面复合率被修改的表面能带弯曲的影响。数值分析的结果也得到了验证，使用速率方程模型考虑光激发载流子的扩散和它们的表面上的复合过程和内部的晶体。
Surface recombination in GaN and ZnO crystals was comparatively investigated using steady-state and time-resolved photoluminescence (PL) measurements. The measurements were performed for various surface orientations (+c, −c, and m-plane surfaces), and the measured PL intensity and lifetime showed distinct dependence on the surface orientation. The dependence clearly indicates that the surface recombination rate is modified by the effects of surface band bending. The results were also verified by numerical analysis using a rate equation model considering the diffusion of photoexcited carriers and their recombination processes on the surface and inside the crystal.