Intraband relaxation time in quantum-well lasers
Intraband relaxation time in quantum-well lasers
复制标题
量子阱激光器的带内弛豫时间
DOI：
10.1109/3.35228
复制
发表时间：
1989
影响因子：
2.5
通讯作者：
M. Asada
中科院分区：
文献类型：
--
作者：
M. Asada
对量子阱激光器的带内弛豫时间进行了理论估算，该时间导致了光增益谱和自发辐射谱的展宽。载流子-载流子和载流子-纵光学（LO）声子散射机制被认为是，它表明，空穴-空穴，电子-空穴和空穴-LO声子散射是占主导地位的光谱展宽。由这些机制决定的带内弛豫时间随阱宽的减小而略有增加。带内弛豫时间对温度、载流子密度、电子和空穴能量的依赖关系也被示出。作为上述计算的推广，讨论了谱线形状，并给出了近似公式。>
Intraband relaxation time, which causes spectral broadening of optical gain and spontaneous emission spectra, is estimated theoretically for quantum-well lasers. Carrier-carrier and carrier-longitudinal-optical (LO) phonon scattering mechanisms are considered, and it is shown that hole-hole, electron-hole, and hole-LO phonon scattering are dominant in spectral broadening. Intraband relaxation time determined by all of these mechanisms increases slightly with the decrease of well width. The dependence of intraband relaxation time on temperature, carrier density, and energy of electron and hole is also shown. Spectral line shape is discussed as an extension of the above calculation, and an approximated formula is given. >