Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
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DOI：
10.1002/adma.201003993
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发表时间：
2011-02-15
影响因子：
29.4
通讯作者：
Kubatkin, Sergey
中科院分区：
文献类型：
--
作者：
Lara-Avila, Samuel;Moth-Poulsen, Kasper;Kubatkin, Sergey
A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
