A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation
A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation
复制标题
用于 GaAs 衬底评估的蚀坑密度和 X 射线摇摆曲线的研究
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
P. Pearah
中科院分区：
文献类型：
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作者：
J. Tartaglia;S. M. Crochiere;C. E. Kalnas;D. L. Farrington;J. A. Kronwasser;P. Pearah
The relationship of structural defects to the electrical properties of semiconductor materials is discussed. Etch pit density (EPD) measurements are normally used to evaluate dislocation density. A nondestructive, quantitative method for evaluation of substrate defect populations is needed for quality assurance. In this study, double crystal x-ray diffraction rocking curves are investigated for this purpose. Rocking curve widths are determined experimentally for a set of GaAs substrated with a range of EPD. The experimentally determined values are also compared with those calculated from simulated rocking curves based on x-ray diffraction theory. Limited correlation between rocking curve widths and EPD is observed.
