Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations
Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations
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DOI：
10.1002/pssb.202000274
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发表时间：
2020-08
期刊：
影响因子：
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通讯作者：
Shuozhi Xu;Yang Li;Youping Chen
中科院分区：
文献类型：
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作者：
Shuozhi Xu;Yang Li;Youping Chen
采用并发原子连续体模拟来研究Si/Ge（111）半相干界面对面内剪切的响应以及与晶格位错的相互作用。考虑了界面结构和能量不同的三种Si/Ge界面。I型界面与shuffle - set滑移面重合，包含边缘位错的六边形网络。II型和III型界面都与滑动集滑移面重合，但它们分别包含一个三角形和六边形的肖克利部分位错网络。模拟结果表明，在三种类型的界面中，1)I型界面在面内剪切作用下最不稳定，2)III型界面对晶格位错滑动的阻碍最显著。
Concurrent atomistic–continuum simulations are employed to study Si/Ge (111) semicoherent interfaces in terms of their responses to an in‐plane shear and interactions with lattice dislocations. Three types of Si/Ge interfaces, differing in interfacial structures and energy, are considered. Type I interface coincides with the shuffle‐set slip plane and contains a hexagonal network of edge dislocations. Type II and Type III interfaces both coincide with the glide‐set slip plane, yet they contain, respectively, a triangular and a hexagonal network of Shockley partial dislocations. The simulations show that among the three types of interfaces, 1) Type I interface is the least stable subject to an in‐plane shear and 2) Type III interface impedes the gliding of lattice dislocations the most significantly.