Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes
Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes
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DOI：
10.1021/acsami.1c14597
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发表时间：
2021-10-30
影响因子：
9.5
通讯作者：
Song, Aimin
中科院分区：
文献类型：
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作者：
Li, Hu;Zhang, Jiawei;Song, Aimin
到目前为止，缺乏较大的带隙已经阻止石墨烯构建有效的电子和光电设备，尽管具有众多的特性。密集的理论研究表明，只有在低3 nm宽的石墨烯纳米纤维（GNR）中才能实现大于1 eV的频带隙，但是这种UltranArrow GNR的真实制造仍然是一个关键的挑战。本文中，我们展示了一种通过纵向无拉链的单壁碳纳米管合成超肉体和光致发光的半导体GNR的方法。原子力显微镜揭示了解压缩过程，并且发现所产生的2.2 nm宽的GNR在与685 nm的相似之处发出强和尖锐的光致发光，表现出非常理想的半导体性质。通过随访光电导率测量结果进一步证实了1.8 eV的带隙，其中产生了相当大的光电流，因为激发波长短于700 nm。更重要的是，我们制造的GNR场效应晶体管（FET）通过采用六角形的氮化硼所封装的异质结构来实现边缘键合的触点，显示出高电流的/关闭比率超过105，并且运营商的迁移率超过840 cm（2）/cm（2）/cm（2）//cm（2）/cm（2）//cm V s，在室温下接近半导体GNR的理论散射极限。尤其是，通过预先模板，还可以实现高度对齐的GNR捆绑包，最高长度为毫米，并且制造的GNR捆绑FET显示出较高的/OFF的比率，达到10（5），定义明确的饱和电流和强烈的光线充足的饱和度。特性。因此，该方法生产的GNR为基于石墨烯的电子和光电子化的有希望应用打开了门。
The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes. Atomic force microscopy reveals the unzipping process, and the resulting 2.2 nm wide GNRs are found to emit strong and sharp photoluminescence at similar to 685 nm, demonstrating a very desirable semiconducting nature. This band gap of 1.8 eV is further confirmed by follow-up photoconductivity measurements, where a considerable photocurrent is generated, as the excitation wavelength becomes shorter than 700 nm. More importantly, our fabricated GNR field-effect transistors (FETs), by employing the hexagonal boron nitride-encapsulated heterostructure to achieve edge-bonded contacts, demonstrate a high current on/off ratio beyond 105 and carrier mobility of 840 cm(2)/V s, approaching the theoretical scattering limit in semiconducting GNRs at room temperature. Especially, highly aligned GNR bundles with lengths up to a millimeter are also achieved by prepatterning a template, and the fabricated GNR bundle FETs show a high on/off ratio reaching 10(5), well-defined saturation currents, and strong light-emitting properties. Therefore, GNRs produced by this method open a door for promising applications in graphene-based electronics and optoelectronics.