Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam
Synthesis of silicon nanowires using laser ablation method and their manipulation by electron beam
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DOI：
10.1016/j.stam.2005.06.015
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发表时间：
2005-01
影响因子：
5.5
通讯作者：
N. Fukata;T. Oshima;T. Tsurui;S. Ito;K. Murakami
中科院分区：
文献类型：
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作者：
N. Fukata;T. Oshima;T. Tsurui;S. Ito;K. Murakami
研究了以铁或镍为催化剂，通过改变靶中催化剂的含量和合成过程中的激光功率等合成参数，对激光烧蚀硅靶合成硅纳米线（SiNWs）的尺寸进行控制。SiNW的直径和长度显著依赖于合成参数，即SiNW的尺寸可以通过合成参数来控制。在扫描电子显微镜的观察过程中也进行了操作的硅纳米线。通过改变硅衬底边缘处的自支撑相邻缠结硅纳米线的充电程度，可以控制它们的打开运动的距离和速度。这种运动可能是由它们之间的库仑排斥作用引起的。
Size control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with iron or nickel as catalysts were investigated by changing the synthesis parameters such as the content of catalyst in targets and laser power during synthesis. The diameter and length of SiNWs significantly depended on the synthesis parameters, i.e. the size of SiNWs can be controlled by the synthesis parameters. Manipulation of SiNWs was also performed during the observation of scanning electron microscope. By changing the degree of charge-up for free-standing adjacent intertwined SiNWs at an edge of Si substrate, the distance and speed of opening motion of them can be controlled. This motion is probably caused by the Coulomb repulsive interaction between them.