Oxide growth on silicon (100) in the plasma phase of dry oxygen using an electron cyclotron resonance source
Oxide growth on silicon (100) in the plasma phase of dry oxygen using an electron cyclotron resonance source
复制标题
使用电子回旋共振源在干氧等离子体相中在硅 (100) 上生长氧化物
DOI：
10.1116/1.589002
复制
发表时间：
1996
影响因子：
1.4
通讯作者：
Hwack
中科院分区：
文献类型：
--
作者：
Keunjoo Kim;M. H. An;Y. Shin;M. Suh;C. Youn;Y. H. Lee;K. Lee;Hwack
利用电子回旋共振源产生的氧等离子体在几种低温下生长了二氧化硅薄膜。等离子体氧化速率进行了研究，通过改变生长参数。氧化层厚度随微波功率的增加呈抛物线状增加，但随压力或流量的增加而减小。Deal-Grove氧化理论的一个补充模型建议等离子体氧化，动力学参数与其他等离子体和热氧化的情况下进行了比较。在室温下的O2等离子体氧化的扩散速率常数提高到热氧化的扩散速率的水平，反应速率常数是远远大于热氧化的情况下。这可能意味着，由于氧原子被ECR等离子体解离，等离子体氧化与通过氧化层的原子扩散和Si-SiO2界面处的原子化学反应有关。高质量的氧化物薄膜的特点是具有断裂的韧性。
Silicon dioxide films were grown using an oxygen plasma generated by an electron cyclotron resonance (ECR) source at several low temperatures. The plasma oxidation rate was investigated by varying the growth parameters. The oxide thickness parabolically increases with microwave power but decreases with increasing pressure or flow rate. A complementary model of the Deal–Grove oxidation theory is suggested for the plasma oxidation, and kinetic parameters are compared with the other plasma and thermal oxidation cases. The diffusion rate constant in O2 plasma oxidation at room temperature is enhanced up to the level of the diffusion rate in thermal oxidation and the reaction rate constant is much larger than the thermal oxidation case. This may imply that, due to oxygen atoms dissociated by the ECR plasma, plasma oxidation is related to the atomic diffusion through oxide layer and the atomic chemical reaction at the Si–SiO2 interface. The high quality of the ultrathin oxide film was characterized with a break...