Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode
Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode
复制标题
晶圆上的硅沟槽光电二极管可使用侧面 X 射线照射模式实现高效 X 射线到电流信号的转换
DOI：
10.7567/jjap.57.04fh04
复制
发表时间：
2018
影响因子：
1.5
通讯作者：
Y. Arima
中科院分区：
文献类型：
--
作者：
T. Ariyoshi;Yuta Takane;Jumpei Iwasa;K. Sakamoto;A. Baba;Y. Arima
在本文中，我们报告了一种直接转换型X射线传感器组成的沟槽结构的硅光电二极管，它实现了高的X射线到电流转换效率下的侧X射线照射。硅X射线传感器的长度为22.6 mm，沟槽深度为300 µm，采用单多晶硅单金属0.35 µm工艺制造。从测试芯片的侧面沿着沟槽光电二极管照射管电压为80 kV的X射线。在25 V的低反向偏置电压下实现了83.8%的X射线到电流转换效率的理论极限。常规间接转换型X射线传感器的X射线到电信号转换效率约为10%。因此，开发的传感器具有比传统传感器高约8倍的转换效率。预计开发的X射线传感器将能够显着降低X射线诊断所需的辐射剂量。
In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.
影响因子：
2.6
作者：
HOUNDFIELD, GN
通讯作者：
HOUNDFIELD, GN
影响因子：
1.2
作者：
Sato, Tatsuhiko;Niita, Koji;Sihver, Lembit
通讯作者：
Sihver, Lembit