Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes
Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes
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DOI：
10.1063/1.3622508
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发表时间：
2011-08
影响因子：
3.2
通讯作者：
A. Martín-Martín-A.-Martín-Martín-1423471189;P. Íñiguez;J. Jiménez;M. Oudart;J. Nagle
中科院分区：
文献类型：
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作者：
A. Martín-Martín-A.-Martín-Martín-1423471189;P. Íñiguez;J. Jiménez;M. Oudart;J. Nagle
研究了量子阱 (QW) 界面与势垒层对基于 AlGaAs 的高功率激光棒 (808 nm) 快速退化的影响。通过热机械模型计算由分面镜处的非辐射复合区域产生的局部加热在器件中引起的热应力。结果表明，随着 QW 界面的热边界电阻质量恶化，实现塑性变形所需的激光功率密度阈值会降低，从而导致位错的产生和这些器件的故障。
The influence of the quantum well (QW) interfaces with the barrier layers on the rapid degradation of AlGaAs based high power laser bars (808 nm) is investigated. Thermal stresses induced in the device by the local heating produced by nonradiative recombination areas at the facet mirror are calculated by means of a thermomechanical model. Results show that the laser power density threshold necessary to achieve the plastic deformation, leading to the generation of dislocations and to the failure of these devices, is reduced as the quality of the QW interfaces worsens in terms of thermal boundary resistance.