Quasi-free-standing monolayer hexagonal boron nitride on Ni
Quasi-free-standing monolayer hexagonal boron nitride on Ni
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DOI：
10.1088/2053-1591/aae5b4
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发表时间：
2018-10
影响因子：
2.3
通讯作者：
Satoru Suzuki;Y. Haruyama;M. Niibe;T. Tokushima;A. Yamaguchi;Y. Utsumi;A. Ito;Ryo Kadowaki;Akane Maruta;T. Abukawa
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文献类型：
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作者：
Satoru Suzuki;Y. Haruyama;M. Niibe;T. Tokushima;A. Yamaguchi;Y. Utsumi;A. Ito;Ryo Kadowaki;Akane Maruta;T. Abukawa
用X射线吸收谱、发射谱、X射线光电子能谱和微区紫外光电子能谱研究了扩散沉淀法生长的单层六方氮化硼薄膜的电子结构。没有观察到h-BN π和Ni 3d轨道之间杂交的迹象。也就是说，发现单层h-BN处于准自由站立状态。这些结果是在鲜明的对比，在以前的研究中，h-BN强烈结合到Ni表面的轨道杂化。在本研究中，不存在杂交归因于不存在Ni（111）表面。晶格匹配的Ni（111）表面被认为是h-BN和Ni之间轨道杂化的必要条件。
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.