Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
复制标题
全固态分子束外延生长的室温晶圆键合InGaP/GaAs//InGaAsP/InGaAs四结太阳能电池
DOI：
10.7567/apex.9.016501
复制
发表时间：
2016
影响因子：
2.3
通讯作者：
Hui Yang
中科院分区：
文献类型：
--
作者：
Pan Dai;Shulong Lu;Shiro Uchida;Lian Ji;Yuanyuan Wu;Ming Tan;Lifeng Bian;Hui Yang
采用全固态分子束外延技术分别在GaAs衬底上和InP衬底上生长了InGaP/GaAs叠层电池和InGaAsP/InGaAs叠层电池。采用室温直接晶片键合技术将这些子电池集成到InGaP/GaAs//InGaAsP/InGaAs晶片键合太阳能电池中，这导致了具有低电阻和高光学透射率的突变界面。研究了每个电池的基极层厚度的电流匹配设计。四结太阳能电池在230太阳下的效率为42.0%，这表明室温晶片键合技术在实现具有四个或更多结的电池的高转换效率方面具有巨大潜力。
An InGaP/GaAs tandem cell on a GaAs substrate and an InGaAsP/InGaAs tandem cell on an InP substrate were grown separately by all-solid-state molecular beam epitaxy. A room-temperature direct wafer-bonding technique was used to integrate these subcells into an InGaP/GaAs//InGaAsP/InGaAs wafer-bonded solar cell, which resulted in an abrupt interface with low resistance and high optical transmission. The current-matching design for the base layer thickness of each cell was investigated. The resulting efficiency of the four-junction solar cell was 42.0% at 230 suns, which demonstrates the great potential of the room-temperature wafer-bonding technique to achieve high conversion efficiency for cells with four or more junctions.