Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition
Uniform ZnO epitaxial films formed at atmospheric pressure by high-speed rotation-type mist chemical vapor deposition
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DOI：
10.7567/apex.8.125502
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发表时间：
2015-11
影响因子：
2.3
通讯作者：
H. Tanoue;T. Taniguchi;S. Wada;Shinya Yamamoto;Shohei Nakamura;Y. Naka;H. Yoshikawa;Mizue Munekata;S. Nagaoka;Yusui Nakamura
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文献类型：
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作者：
H. Tanoue;T. Taniguchi;S. Wada;Shinya Yamamoto;Shohei Nakamura;Y. Naka;H. Yoshikawa;Mizue Munekata;S. Nagaoka;Yusui Nakamura
在2-in.-在大气压下通过高速旋转型雾状化学气相沉积而不使用任何真空设备来制备直径m平面蓝宝石衬底。用扫描电子显微镜、X射线衍射仪、电子背散射衍射仪和室温光致发光仪对薄膜进行了表征。实验结果表明，在m面蓝宝石衬底上外延生长的m面ZnO薄膜不仅厚度均匀，而且结晶度和光学性能都很好。这些结果将促进发光二极管等ZnO基器件的发展。
Uniform ZnO epitaxial films were formed on 2-in.-diameter m-plane sapphire substrates by high-speed rotation-type mist chemical vapor deposition at atmospheric pressure, without using any vacuum equipment. The ZnO films were characterized by scanning electron microscopy, X-ray diffraction in θ–2θ and ϕ scanning modes, electron backscatter diffraction, and room-temperature photoluminescence measurements. Experimental results show that m-plane ZnO films were epitaxially grown on the m-plane sapphire substrates with high uniformity of not only thickness but also crystallinity and optical properties. These results will promote the progress of ZnO-based devices such as light-emitting diodes.