Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination)
Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination)
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具有高能分辨率能力的外延砷化镓像素X射线探测器（法诺因子实验测定）
DOI：
10.1109/23.554815
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发表时间：
1997
影响因子：
1.8
通讯作者：
H. Lüth
中科院分区：
文献类型：
--
作者：
G. Bertuccio;A. Pullia;J. Lauter;A. Förster;H. Lüth
采用分子束外延技术设计了面积为170/spl times/320/spl mu/m/sup 2/、厚度为5/spl mu/m的砷化镓像素探测器，并用X射线和/spl伽马/射线进行了测试。没有观察到明显的电荷捕获效应，并且测得电荷收集效率为 100%。在室温下，在 59.54 keV 处获得了 671 eV 半峰全宽 (FWHM) 的能量分辨率，电子噪声为 532 eV FWHM。当探测器冷却至 243 K 时，电子噪声降低至 373 eV FWHM，并且可以解析 /sup 55/Fe 光谱的 K/sub /spl alpha// 和 K/sub /spl beta// 线。 GaAs 的 Fano 因子已在室温下用 59.5 keV 光子测量，得出 F=0.12/spl plusmn/0.01。
Gallium Arsenide pixel detectors with an area of 170/spl times/320 /spl mu/m/sup 2/ and thickness of 5 /spl mu/m, realized by molecular beam epitaxy, have been designed and tested with X- and /spl gamma/ rays. No significant charge trapping effects have been observed, and a charge collection efficiency of 100% has been measured. At room temperature an energy resolution of 671 eV full width at half maximum (FWHM) at 59.54 keV has been obtained, with an electronic noise of 532 eV FWHM. With the detector cooled to 243 K, the electronic noise is reduced to 373 eV FWHM, and the K/sub /spl alpha// and K/sub /spl beta// lines of the /sup 55/Fe spectrum can be resolved. The Fano factor for GaAs has been measured at room temperature with 59.5 keV photons yielding F=0.12/spl plusmn/0.01.