Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition
Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition
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DOI：
10.1039/c4ra09997d
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发表时间：
2014-01-01
期刊：
影响因子：
3.9
通讯作者：
Carmalt, Claire J.
中科院分区：
文献类型：
--
作者：
Ponja, Sapna D.;Sathasivam, Sanjayan;Carmalt, Claire J.
采用气溶胶辅助化学气相沉积法（AACVD）在450 ℃下在玻璃衬底上合成了高透明导电的ZnO、氟或铝掺杂以及铝-氟共掺杂的ZnO薄膜。采用X射线衍射（XRD）、波长色散X射线能谱（WDX）、X射线光电子能谱（XPS）、扫描电子显微镜（SEM）和UV/维斯/近红外光谱对薄膜进行了表征。膜厚为300-350 nm，结晶，在550 nm处显示出高透明度（80-90%）。共掺杂的膜由1原子%的氟和2原子%铝，其电荷载流子浓度和电荷载流子迁移率分别为3.47 × 10（20）cm（-3）和9.7 cm（2）V-1 s（-1）。共掺杂薄膜的带隙为3.7 eV，等离子体边缘交叉约为1.5 eV。1800 nm。该膜具有高度结构化的形态相比，未掺杂和单掺杂的ZnO薄膜的透明导电氧化物的应用。
Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium-fluorine co-doped ZnO thin films on glass substrates at 450 degrees C. All films were characterised by X-ray diffraction (XRD), wavelength dispersive X-ray spectroscopy (WDX), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV/Vis/Near IR spectroscopy. The films were 300-350 nm thick, crystalline and displayed high transparency at 550 nm (80-90%). The co-doped film consisted of 1 at.% fluorine and 2 at.% aluminium, exhibiting a charge carrier concentration and a charge carrier mobility of 3.47 x 10(20) cm(-3) and 9.7 cm(2) V-1 s(-1), respectively. The band gap of the co-doped film was found to be 3.7 eV and the plasma edge crossover was ca. 1800 nm. This film had a highly structured morphology in comparison to the un-doped and single doped ZnO films for transparent conducting oxide applications.