Deep ultraviolet lasing from AlGaN multiple-quantum-well structures
Deep ultraviolet lasing from AlGaN multiple-quantum-well structures
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AlGaN 多量子阱结构的深紫外激光
DOI：
10.1002/pssc.201510192
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发表时间：
2016-05
期刊：
影响因子：
--
通讯作者：
Jinmin
中科院分区：
文献类型：
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作者：
Jianchang Yan;Tian;Yingdong;Chen;Xiang;Zhang;Yun;Wang;Junxi;Li;Jinmin
本文报道了AlGaN/Al(Ga)N多量子阱（MQW） DUV激光器结构的研究工作。采用金属有机化学气相沉积的方法，在蓝宝石衬底上生长了两种结构的MQW，即AlxGa1-xN/AlyGa1-yN MQW（样品A）和AlzGa1-zN/AlN MQW（样品B）。两种结构都实现了室温下的光泵浦激光。样品A的主要激光发射波长为288 nm，同时存在一些寄生的较长波峰。数值模拟结果表明，样品A的光约束因子很低，小于0.5%。这使得a样品的激光阈值高，激光寿命短，B样品的光约束系数大大提高到10%以上。这有效地提高了样品b的激光性能，其激光阈值估计为523 kW/cm2，激光光谱在281 nm左右达到峰值。（©2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
We report our research work on AlGaN/Al(Ga)N multiple-quantum-well (MQW) DUV laser structures. Two types of MQW structures, that is, AlxGa1-xN/AlyGa1-yN MQW (Sample A) and AlzGa1-zN/AlN MQW (Sample B), were grown on sapphire substrates by Metal-organic chemical vapour deposition. Optically pumped lasing at room temperature has been achieved from both structures. For Sample A, the main lasing emission wavelength is 288 nm along with some parasitic longer wavelength peaks. Numerical simulation results indicate that the optical confinement factor in Sample A is very low, less than 0.5%. This resulted in the high lasing threshold and short lasing lifetime of Sample A. The optical confinement factor of Sample B is greatly increased to more than 10%. This effectively improved the lasing performance of Sample B. Its lasing threshold is estimated to be 523 kW/cm2 and the lasing spectra peaked at around 281 nm. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)