Effects of composition control on crystallographic and magnetic characteristics of Ba ferrite films sputtered with the mixture of Xe, Kr, Ar, and O2 for recording media
Effects of composition control on crystallographic and magnetic characteristics of Ba ferrite films sputtered with the mixture of Xe, Kr, Ar, and O2 for recording media
复制标题
成分控制对记录介质用Xe、Kr、Ar和O2混合溅射Ba铁氧体薄膜晶体和磁特性的影响
DOI：
10.1063/1.364829
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
K. Noma;N. Matsushita;S. Nakagawa;M. Naoe
采用无等离子体溅射法，以Na 2SO 4、Kr、Ar和O2为溅射气体，制备了Ba铁氧体/ZnO双层薄膜。详细研究了薄膜成分的差异以及对应于气体分压和气体种类的晶体学和磁性特征的变化。等离子体诊断结果表明，在溅射气体中加入Na 2SO 4可以抑制反冲Ar原子和高能溅射粒子对薄膜表面的强烈轰击以及Ba原子的选择性再溅射。当Ba原子在薄膜表面的粘附系数达到最大值时，采用Ar、Ar+和O2的混合气体溅射，可以沉积出性能优良的Ba铁氧体薄膜，而对薄膜表面的轰击可以忽略不计，薄膜成分接近化学计量比。另一方面，虽然用Kr代替Ar能有效地抑制轰击表面，但到达表面的Ba的能量却大大降低。
Ba ferrite/ZnO bilayered films were deposited by plasma-free sputtering method using the mixture of Xe, Kr, Ar, and O2 as sputtering gas. The discrepancy in the film composition and changes in crystallographic and magnetic characteristics corresponding to the partial gas pressure and gas species were investigated in detail. The plasma diagnosis implied that the severe bombardment of recoiled Ar atoms and energetic sputtered particles to the surface of the film and the selective resputtering of Ba atoms were suppressed by adding Xe into sputtering gas. Ba ferrite films with excellent characteristics were deposited using the mixture of Ar, Xe, and O2 as sputtering gas when the sticking coefficient of Ba atoms on the film surface took the maximum value, while the bombardment to the film surface was negligible and the film composition was almost stoichiometric. On the other hand, although the substitution of Kr for Ar is effective for suppressing the bombardment to the surface, the energy of the arriving Ba a...