Spin-singlet small bipolarons in Nb-doped BaTiO3.
Spin-singlet small bipolarons in Nb-doped BaTiO3.
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DOI：
10.1103/physrevlett.96.246404
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发表时间：
2005-11
影响因子：
8.6
通讯作者：
T. Kolodiazhnyi;S. Wimbush
中科院分区：
文献类型：
--
作者：
T. Kolodiazhnyi;S. Wimbush
在较宽的温度范围内测量了n型BaTi1-xNbxO3的磁化率和电阻率。研究发现，对于0<；x<；0.2，掺杂电子形成束缚能约为110 meV的固定自旋单态小双极化子。当x=0.2时，在15K附近的最大电阻率表明电荷载流子从带向跳跃输运，这一现象在实际的极化子系统中很少观察到。
The magnetic susceptibility and the electrical resistivity of n-type BaTi1-xNbxO3 have been measured over a wide temperature range. It is found that, for 0<x<0.2, dopant electrons form immobile spin-singlet small bipolarons with binding energy around 110 meV. For x=0.2, a maximum in the electrical resistivity around 15 K indicates a crossover from band to hopping transport of the charge carriers, a phenomenon expected but rarely observed in real polaronic systems.