Freestanding complex-oxide membranes

Freestanding complex-oxide membranes
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独立式复合氧化物膜

DOI:
10.1088/1361-648x/ac7dd5
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发表时间:
2022
期刊:
Journal of Physics: Condensed Matter
影响因子:
--
通讯作者:
Martin, Lane W
Martin, Lane W
中科院分区:
--
文献类型:
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作者:
Pesquera, David;Fernández, Abel;Khestanova, Ekaterina;Martin, Lane W

文献摘要

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复合氧化物表现出广泛的功能响应,在无机固体领域是无与伦比的,这使它们成为应用于下一代场效应晶体管、自旋电子器件、电光调制器、热释电探测器或氧还原催化剂等各种应用的有前途的材料。它们在环境条件下的稳定性、化学上的通用性以及对微小结构和电子修饰的敏感性使它们成为发现紧急现象和为下一代设备产生新功能的理想研究对象。单晶、独立复合氧化物膜合成的最新进展为在近乎理想的系统中研究这些材料(例如与衬底无机械/热相互作用)提供了前所未有的机会,并扩大了调整其有序参数(即(反)铁磁、(反)铁电、铁弹性)的工具范围。通过避免合成过程中的化学、结构或热限制,增加实现新型异质集成方法(包括连接不同材料)的可能性。在这里,我们回顾了复合氧化物膜的制造和表征的最新进展,并讨论了它们在纳米尺度上揭示新型物理化学现象的潜力,以及在技术相关设备中进一步开发其功能的潜力。
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (eg free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (ie (anti-) ferromagnetic,(anti-) ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.