Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer
Properties of gas source molecular beam epitaxy grown wavelength extended InGaAs photodetector structures on a linear graded InAlAs buffer
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DOI：
10.1088/0268-1242/23/12/125029
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发表时间：
2008-12-01
影响因子：
1.9
通讯作者：
Li, Cheng
中科院分区：
文献类型：
--
作者：
Zhang, Yong-Gang;Gu, Yi;Li, Cheng
用XRD和PL技术，结合光学显微镜和原子力显微镜，研究了在线性渐变InAlAs缓冲层上生长的波长扩展（2.4 μ m）InGaAs光电探测器结构的性质。结果表明，只有当失配度小于或等于1.2% μ m（-1）时，才能得到完全弛豫和良好的光学特性，而当失配度小于或等于2.4% μ m（-1）时，才能得到中等的形貌和结构质量。GSMBE生长的1.4 μ m的薄线性渐变InAlAs缓冲层足以使与InP衬底具有1.7%失配的InGaAs层的应变松弛，并达到晶片的良好质量。讨论了缓冲剂在不同分级速率下的弛豫机理。
The properties of gas source molecular beam epitaxy grown wavelength extended (2.4 mu m) InGaAs photodetector structures on a linear graded InAlAs buffer with different grading rates have been investigated by means of XRD and PL techniques in conjunction with optical and atomic force microscopy. Results show that full relaxation and favorable optical characteristics of the active layers only occur for the wafers with a mismatch grading rate of about 1.2% mu m(-1) or lower, whereas moderate morphology and structural quality could be achieved for a mismatch grading rate up to 2.4% mu m(-1). A thin GSMBE grown linear graded InAlAs buffer layer of 1.4 mu m is sufficient to relax the strain of an InGaAs layer with 1.7% mismatch to the InP substrate and reach a good quality of the wafer. The relaxation mechanisms of the buffer at different grading rates were also discussed.