Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure
Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure
复制标题
基于二维电子空穴管结构的GaAs/AlGaAs/GaAs纳米线光电探测器的性能增强
DOI：
10.1021/acs.nanolett.0c00232
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发表时间：
2020
期刊：
影响因子：
10.8
通讯作者：
Wei Zhipeng
中科院分区：
文献类型：
--
作者：
Zhu Xiaotian;Lin Fengyuan;Zhang Zhihong;Chen Xue;Huang Hao;Wang Dengkui;Tang Jilong;Fang Xuan;Fang Dan;Ho Johnny C.;Liao Lei;Wei Zhipeng
在这里，我们设计和工程师的轴向非对称GaAs/AlGaAs/GaAs（G/A/G）纳米线（NW）光电探测器，在室温下有效地工作。基于I型能带结构，该器件可以实现二维电子空穴管（2DEHT）结构，以大幅提高性能。在GaAs/AlGaAs势垒两侧的界面处观察到2DEHT的形成，它为电子和空穴的输运构筑了有效的通道，减少了光生载流子的复合，提高了器件的光电流.特别地，G/A/G NW光电探测器表现出0.57 A/W的响应度和1.83 X 10（10）琼斯的探测度，其比纯GaAs NW器件的响应度和探测度高约7倍。利用2DEHT结构，复合概率也被显著抑制，从81.8%到13.2%。这些都充分说明了合理的能带结构设计对于提高光生载流子的产生、分离和收集性能的重要性。
Here, we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs (G/A/G) nanowire (NW) photodetector that operates efficiently at room temperature. Based on the I-type band structure, the device can realize a two-dimensional electron-hole tube (2DEHT) structure for the substantial performance enhancement. The 2DEHT is observed to form at the interface on both sides of GaAs/AlGaAs barriers, which constructs effective pathways for both electron and hole transport in reducing the photocarrier recombination and enhancing the device photocurrent. In particular, the G/A/G NW photodetector exhibits a responsivity of 0.57 A/W and a detectivity of 1.83 x 10(10) Jones, which are about 7 times higher than those of the pure GaAs NW device. The recombination probability has also been significantly suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure. All of these can evidently demonstrate the importance of the appropriate band structure design to promote photocarrier generation, separation, and collection for high-performance optoelectronic devices.