Electron beam lithography:: resolution limits and applications
Electron beam lithography:: resolution limits and applications
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DOI：
10.1016/s0169-4332(00)00352-4
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发表时间：
2000-09-01
影响因子：
6.7
通讯作者：
Launois, H
中科院分区：
文献类型：
--
作者：
Vieu, C;Carcenac, F;Launois, H
我们报道了常规聚甲基丙烯酸甲酯（PMMA）有机抗蚀剂中电子束光刻（EBL）的分辨率极限。我们展示了对于孤立特征，分辨率可推至10纳米以下，以及如何以30纳米的间距制造密集的周期性结构阵列，从而使密度接近700吉比特/平方英寸。我们表明，在高入射电子能量下，抗蚀剂中写入的本征分辨率可小至3到5纳米，而实际分辨率受曝光后抗蚀剂的显影以及图形转移的限制。我们展示了通过剥离法可重复制造亚10纳米线条以及通过剥离和反应离子蚀刻（RIE）制造30纳米间距柱阵列的优化工艺结果。我们还介绍了这些纳米结构在制造用于纳米压印光刻（NIL）的超高密度模具以及制造可用于单电子器件应用或小分子连接的多隧道结器件方面的一些应用。（C）2000年由爱思唯尔科学出版社出版。
We report on the resolution limits of Electron Beam Lithography (EBL) in the conventional polymethylmethacrylate (PMMA) organic resist. We show that resolution can be pushed below 10 nm for isolated features and how dense arrays of periodic structures can be fabricated at a pitch of 30 nm, leading to a density close to 700 Gbit/in(2). We show that intrinsic resolution of the writing in the resist is as small as 3 to 5 nm at high incident electron energy, and that practical resolution is limited by the development of the resist after exposure and by pattern transfer. We present the results of our optimized process for reproducible fabrication of sub-10 nm lines by lift-off and 30-nm pitch pillar arrays by lift-off and reactive ion etching (RIE). We also present some applications of these nanostructures for the fabrication of very high density molds for nano-imprint lithography (NIL) and for the fabrication of Multiple Tunnel Junction devices that can be used for single electron device applications or for the connection of small molecules. (C) 2000 Published by Elsevier Science B.V.