Fabrication of multilayer passive and active electric components on polymer using inkjet printing and low temperature laser processing

Fabrication of multilayer passive and active electric components on polymer using inkjet printing and low temperature laser processing
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DOI:
10.1016/j.sna.2006.04.036
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发表时间:
2007-02-28
影响因子:
4.6
通讯作者:
Poulikakos, Dimos
Poulikakos, Dimos
中科院分区:
工程技术3区
文献类型:
--
作者:
Ko, Seung Hwan;Chung, Jaewon;Poulikakos, Dimos

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本文介绍了在柔性聚合物衬底上低温制备无源(导体、电容)和有源(场效应晶体管)电子元件的方法。采用按需喷墨(DOD)系统在柔性聚合物基底上印刷悬浮在α-松油醇溶剂中的金纳米颗粒、在PGMEA(丙二醇单甲醚乙酸酯)溶剂中的PVP(聚-4-乙烯基苯酚)、在氯仿溶液中的半导体聚合物(改性聚噻吩)以制备无源和有源电子元件。短脉冲激光烧蚀使更精细的电子元件能够克服喷墨沉积的分辨率限制。采用连续氩离子激光局部照射,使载体溶剂蒸发并烧结金纳米颗粒。此外,多层金纳米粒子薄膜的选择性烧蚀,证明了使用新的SPLA-DAT(选择性脉冲激光烧蚀不同的烧蚀阈值)计划烧结和非烧结的金纳米粒子。最后,选择性烧蚀多层膜来定义窄场效应晶体管(FET)沟道。在沟道顶部沉积半导体聚合物溶液以完成OFET(有机场效应晶体管)的制造。(c)2006 Elsevier B.V.保留所有权利。
The low temperature fabrication of passive (conductor, capacitor) and active (field effect transistor) electrical components on flexible polymer substrate is presented in this paper. A drop-on-demand (DOD) ink-jetting system was used to print gold nano-particles suspended in Alpha-Terpineol solvent, PVP (poly-4-vinylphenol) in PGMEA (propylene glycol monomethyl ether acetate) solvent, semiconductor polymer (modified polythiophene) in chloroform solution to fabricate passive and active electrical components on flexible polymer substrates. Short pulsed laser ablation enabled finer electrical components to overcome the resolution limitation of inkjet deposition. Continuous argon ion laser was irradiated locally to evaporate the carrier solvent as well as sinter gold nano-particles. In addition, selective ablation of multilayered gold nanoparticle film was demonstrated using the novel SPLA-DAT (selective pulsed laser ablation by different ablation threshold) scheme for sintered and non-sintered gold nanoparticles. Finally, selective ablation of multilayered film was used to define narrow FET (field effect transistor) channel. Semiconductor polymer solution was deposited on top of channel to complete OFET (organic field effect transistor) fabrication. (c) 2006 Elsevier B.V. All rights reserved.