Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement
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DOI：
10.1021/acsnano.9b01775
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发表时间：
2019-05-01
期刊：
影响因子：
17.1
通讯作者：
Liu, Huiyun
中科院分区：
文献类型：
--
作者：
Zhang, Yunyan;Davis, George;Liu, Huiyun
同轴量子威尔斯井（QWs）是奈米线雷射的理想候选者，提供强载子限制且允许腔模与增益介质的紧密匹配。我们报告了一个详细的结构和光学研究和观察的混合V族GaAs砷磷纳米线与GaAs量子阱的激光。与先前研究的常见V族结构（例如，AlGaAs/GaAs），其包括高应变二元GaAs QW，不存在较低带隙核心区和深载流子势威尔斯阱。尽管有很大的晶格失配（类似于1.7%），它是可能的生长无缺陷的GaAs同轴量子阱具有高的光学质量。大的带隙差导致强的载流子限制，并且向GaAs QW施加高度压缩应变的能力也被预期对激光器性能有益。对于一个非完全优化的结构，包含三个量子阱，我们实现了低温激光与低的外部（内部）阈值为20（0.9）μ J/cm（2）/脉冲。此外，观察到一个非常窄的激光线宽度为0.15 nm。这些结果将NW激光器结构扩展到同轴III-V-V量子阱，这非常适合作为NW发射器的平台。
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (similar to 1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) mu J/cm(2)/pulse. In addition, a very narrow lasing line width of similar to 0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.