Optical response in amorphous GaAs thin films prepared by pulsed laser deposition
Optical response in amorphous GaAs thin films prepared by pulsed laser deposition
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DOI：
10.1143/jjap.39.6304
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发表时间：
2000-11-01
期刊：
影响因子：
--
通讯作者：
Tonouchi, M
中科院分区：
文献类型：
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作者：
Kiwa, T;Kawashima, I;Tonouchi, M
本文研究了GaAs薄膜的飞秒光响应。我们用脉冲激光沉积法在250 ℃以下的温度下在MgO衬底和YBa_2Cu_3O_（7-δ）（YBCO）薄膜上制备了GaAs薄膜。用飞秒时域反射率变化测量方法测量了GaAs薄膜的光生载流子寿命小于1 ps。脉冲电磁波[太赫兹（THz）辐射]包含高达1 THz的频率分量从使用制备的薄膜制造的光电导开关发射。我们还评估了YBCO薄膜上光电开关发射的太赫兹辐射特性。
Femtosecond optical response in GaAs thin films has been studied, We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-delta (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250 degreesC, A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiaiton] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.