Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups
Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups
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DOI：
10.1021/acsnano.9b08162
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发表时间：
2020-02-01
期刊：
影响因子：
17.1
通讯作者：
Ignacio Pascual, Jose
中科院分区：
文献类型：
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作者：
Li, Jingcheng;Brandimarte, Pedro;Ignacio Pascual, Jose
石墨烯纳米带的电子性质可以通过化学掺杂来精确调节。在这里，我们证明了连接在手性GNRs（chGNRs）的边缘的氨基（NH2）官能团可以有效地门控chGNRs，并导致金属表面上的价带（VB）去布居。使用官能化的联蒽前体通过在Au（111）上的表面合成来生长NH2掺杂的chGNR。扫描隧道光谱解析的NH 2基团显着上移的chGNRs的频带，导致费米能级交叉的VB开始的chGNRs。通过密度泛函理论模拟，我们证实了空穴掺杂行为是由于边缘NH（2）基团引起的能带上移。
The electronic properties of graphene nanorib-bons (GNRs) can be precisely tuned by chemical doping. Here we demonstrate that amino (NH2) functional groups attached at the edges of chiral GNRs (chGNRs) can efficiently gate the chGNRs and lead to the valence band (VB) depopulation on a metallic surface. The NH2-doped chGNRs are grown by on-surface synthesis on Au(111) using functionalized bianthracene precursors. Scanning tunneling spectroscopy resolves that the NH2 groups significantly upshift the bands of chGNRs, causing the Fermi level crossing of the VB onset of chGNRs. Through density functional theory simulations we confirm that the hole- doping behavior is due to an upward shift of the bands induced by the edge NH(2 )groups.