Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
复制标题
直拉硅中生长缺陷分布对生长速率的依赖性
DOI：
10.1143/jjap.32.3675
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发表时间：
1993
影响因子：
1.5
通讯作者：
Tatsuhiko Shigematsu Tatsuhiko Shigematsu
中科院分区：
文献类型：
--
作者：
S. Sadamitsu;S. Umeno;Y. Koike;M. Hourai;Shigeo Sumita Shigeo Sumita;Tatsuhiko Shigematsu Tatsuhiko Shigematsu
用择优腐蚀和红外光散射层析术（LST）研究了在不同晶体生长速率（0.4，0.7，1.1mm/min）下生长的直径为6英寸的直拉硅单晶中的生长缺陷。将生长缺陷图像分为以下四种类型：（a）流动图案（楔形蚀刻坑），（B）通过LST观察到的IR缺陷图像，（c）环状分布的小坑，和（d）大坑。二次离子质谱分析表明，红外缺陷是氧沉淀。通过透射电子显微镜将大凹坑缺陷识别为长度约为30 µm的大位错环。在0.7 mm/min至1.1 mm/min的生长速率下，流型缺陷和IR缺陷共存于环状分布的氧化诱导堆垛层错（ring-OSF）区域内。然而，在小于0.7 mm/min的生长速率下，在环外部的区域中观察到大的凹坑缺陷。特征环状分布的小坑缺陷上观察到的环形区域的外周。流型缺陷在1100°C退火过程中消失，而IR缺陷在1250°C下稳定。
As-grown defects in 6-inch-diameter Czochralski-silicon crystals grown under different crystal growth rate conditions (0.4, 0.7, 1.1 mm/min) were studied by means of preferential etching and IR light-scattering tomography (LST). Grown-in defect images were classified into four types as follows: (a) flow patterns (wedge-shaped etch pits), (b) IR-defect images observed by LST, (c) ringlike distributed small pits, and (d) large pits. It was found by secondary ion mass spectrometry that IR defects are oxygen precipitates. Large pit defects were identified by transmission electron microscopy as large dislocation loops with a length of about 30 µm. At growth rates from 0.7 mm/min to 1.1 mm/min, flow pattern defects and IR defects coexist inside a ringlike distributed oxidation-induced stacking fault (ring-OSF) region. However, at growth rates less than 0.7 mm/min, large pit defects were observed in the region outside the ring. Characteristic ringlike distributed small pit defects were observed on the outer periphery of the ring region. Flow pattern defects were annihilated during annealing at 1100°C, while IR defects were stable at 1250°C.