Observation of the anomalous Hall effect in GaAs
Observation of the anomalous Hall effect in GaAs
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DOI：
10.1088/0022-3727/40/6/013
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发表时间：
2007-03-21
影响因子：
3.4
通讯作者：
Miah, M. Idrish
中科院分区：
文献类型：
--
作者：
Miah, M. Idrish
基于反常霍尔效应（AHE）的自旋电流的直接检测设备，被制造在n型GaAs体半导体材料上。当光生自旋极化电子注入器件中时，器件中观察到了AHE效应，并发现这种效应与外加电场有关。基于D 'yakonov-Perel'（DP）自旋弛豫机制讨论了场依赖性霍尔效应的起源。自旋相关的霍尔效应也被发现是随着掺杂浓度的增加而增强。由于该效应与自旋霍尔效应密切相关，因此实验结果在半导体自旋电子器件中具有潜在的应用价值。
Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.