Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
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光致发光探测 GaAsBi 中铋诱导的带尾态
DOI：
10.1063/1.5079266
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发表时间：
2019-02-04
影响因子：
4
通讯作者：
Shao，Jun
中科院分区：
文献类型：
--
作者：
Yan，Bing;Chen，Xiren;Shao，Jun
半导体中的带尾态反映了材料生长和/或处理的效果，影响光电应用的性能，因此是一个备受关注的问题。稀铋砷化镓被认为是非常有竞争力的，但铋的作用还没有得到很好的澄清。在这封信中，我们调查的影响Bi掺入的带尾状态在GaAs 1 −xBix的激发功率和磁场依赖的光致发光（PL）测量在低温下。三个PL功能被确定从一个广泛的PL峰，蓝移单调的激发功率的增加。没有PL功能与单个Bi含量的自由激子复合，带尾填充，而不是施主-受主对过程是负责的功率诱导的蓝移。带尾态密度随着Bi掺杂量的增加而增加，影响了Bi诱导带隙减小的测定。结果表明，激发光致发光和磁致发光的联合分析可以很好地探测半导体中的带尾态，半导体中的带尾态反映了材料生长和/或处理的效果，影响光电应用的性能，因此是一个备受关注的问题。稀铋砷化镓被认为是非常有竞争力的，但铋的作用还没有得到很好的澄清。在这封信中，我们调查的影响Bi掺入的带尾状态在GaAs 1 −xBix的激发功率和磁场依赖的光致发光（PL）测量在低温下。三个PL功能被确定从一个广泛的PL峰，蓝移单调的激发功率的增加。没有PL功能与单个Bi含量的自由激子复合，带尾填充，而不是施主-受主对过程是负责的功率诱导的蓝移。带尾态密度随着Bi掺杂量的增加而增加，影响了Bi诱导带隙减小的测定。结果表明，联合分析励磁电流和励磁电流是可行的。
Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs1−xBix by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitation- and magneto-PL may serve as a good probe for band-tail states in semiconductors.Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs1−xBix by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitat...