Fabrication of Flexible Resistive Switching Devices Based on Lead-Free All-Inorganic CsSnBr3Perovskite Using a One-Step Chemical Vapor Deposition Method
Fabrication of Flexible Resistive Switching Devices Based on Lead-Free All-Inorganic CsSnBr3Perovskite Using a One-Step Chemical Vapor Deposition Method
复制标题
一步化学气相沉积法制备基于无铅全无机 CsSnBr3 钙钛矿的柔性阻变器件
DOI：
10.1002/aelm.202000799
复制
发表时间：
2020-10-12
影响因子：
6.2
通讯作者：
Xiong, Rui
中科院分区：
文献类型：
--
作者：
Wang, Hongjun;Lin, Jiaquan;Xiong, Rui
电阻开关（RS）器件由于其优异的耐久性和保持力、快速的开关速度和超高的存储密度能力而发展成为存储器领域中最有前途的候选者之一。然而，有毒铅离子的共存和低RS性能在很大程度上限制了卤化物钙钛矿在非易失性存储器领域的应用。本文中，无铅全无机钙钛矿CsSnBr（3）薄膜通过一步化学气相沉积（CVD）方法在柔性聚酰亚胺（PI）衬底上合成，以构建环境友好的RS器件。具有Pt/CsSnBr 3/Pt/PI结构的RS器件具有超低的置位/复位电压（约为0.2/-0.15 V）和高的开/关比（约为10（5）），表现出可靠和可重复的双极RS特性。此外，RS器件还通过连续弯曲循环下的强大电流-电压曲线进行了进一步测试，表现出较高的机械弯曲性和电气可靠性。这项工作表明，无铅全无机钙钛矿CsSnBr（3）薄膜是下一代环保RS器件应用的开关介质的良好候选者，并为未来的柔性电子开辟了一条道路。
Resistive switching (RS) devices have evolved as one of the most promising candidates in the memory filed due to their excellent endurance and retention, fast switching speed, and extra-high storage density capability. However, the coexistence of toxic lead cations and low RS performance have largely limited the application of halide perovskite in nonvolatile memory filed. Herein, the lead-free all-inorganic perovskite CsSnBr(3)films are synthesized on flexible polyimide (PI) substrates through a one-step chemical vapor deposition (CVD) method to construct environmentally friendly RS devices. The RS devices with Pt/CsSnBr3/Pt/PI structure exhibit reliable and reproducible bipolar RS characteristics with an ultralow set/reset voltage (approximate to 0.2/-0.15 V) and a high on/off ratio (approximate to 10(5)). Additionally, the RS devices are further tested by robust current-voltage curves under consecutive flexing cycles, exhibiting high mechanical bendability and electrical reliability. This work demonstrates that lead-free all-inorganic perovskite CsSnBr(3)film is a good candidate as switching media for applications in the next-generation environmentally friendly RS devices and opens an avenue for future flexible electronics.