Excess carrier lifetimes in Ge layers on Si
Excess carrier lifetimes in Ge layers on Si
复制标题
Si 上 Ge 层中的超载流子寿命
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
H. Sigg
中科院分区：
文献类型：
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作者：
R. Geiger;J. Frigerio;M. Süess;D. Chrastina;G. Isella;Ralph Spolenak;Jérôme Faist;H. Sigg
用基于同步加速器的泵浦-探测透射谱测量了生长在硅或绝缘体上的Ge层中的过量载流子寿命。我们观察到，寿命不是强烈地依赖于生长参数和退火法，而是依赖于掺杂分布。Ge/Si界面的缺陷层是主要的非辐射复合通道。因此，Ge/Si中最长的寿命(2.6 ns)是在足够厚的Ge层中获得的，该Ge层具有内置场，它排斥Ge/Si界面的电子。由于没有缺陷界面，在过度生长的绝缘体上生长的锗获得了较长的寿命(5.3 ns)。
The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6 ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3 ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.