Study of Silicon Micro-Structuring Using Ultra-Short Laser Pulses
Study of Silicon Micro-Structuring Using Ultra-Short Laser Pulses
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发表时间：
2006
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通讯作者：
Zhu Jing-tao
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作者：
Zhu Jing-tao
在不同的环境气氛下，利用累积超短激光脉冲照射，在硅表面形成尖锥尖刺阵列，制备了新型材料“黑硅”。皮秒（ps）和飞秒（fs）激光照射下，硅表面发生锥形尖峰演化的物理机制是不同的。尖峰阵列的形成取决于脉冲持续时间和周围大气。特别是在SF_6环境下，详细分析了ps和fs激光辐照下硅表面微结构的演变。在ps激光照射下，硅表面熔化后形成尖峰阵列；而在fs激光照射下，尖峰阵列的形成不经过液相。初步实验表明，在1.5~16 μm波长范围内，红外辐射吸收率大于80%。
The new material “black silicon” formed by arrays of sharp conical spikes on the silicon surface is fabricated under the cumulative ultra-short laser pulses irradiation in different ambient atmospheres. The physical mechanisms of conical spikes evolutions impacting silicon surface under picosecond (ps) and femtosecond (fs) laser irradiations are different. The formation of spikes arrays depends on the pulse duration and ambient atmosphere. Especially, in SF_6 ambient atmosphere, silicon surface micro-structuring evolutions under ps and fs laser irradiations are analyzed in detail. Under the ps laser irradiation, silicon surface is melted before the spike arrays formed; while under the fs laser irradiation, the formation of spike array does not go through the liquid phase. The preliminary experiment shows that the infrared radiation absorptance is more than 80% at the wavelength range of 1.5～16 μm.