Growth of β-NaGaO2 thin films using ultrasonic spray pyrolysis
Growth of β-NaGaO2 thin films using ultrasonic spray pyrolysis
复制标题
利用超声波喷雾热解生长 β-NaGaO2 薄膜
DOI：
10.1080/21870764.2022.2082049
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发表时间：
2022
影响因子：
2.3
通讯作者：
Omata Takahisa
中科院分区：
文献类型：
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作者：
Suzuki Issei;Suzuki Shunichi;Watanabe Tatsuya;Kita Masao;Omata Takahisa
β-NaGaO2薄膜作为β-CuGaO2薄膜的前驱体，是一种安全环保的薄膜太阳能电池材料，采用超声波喷雾热解技术，采用溶解氧化物和氢氧化物的前驱体水溶液来生长。虽然所获得的薄膜的形貌取决于前体溶液液滴的预热温度，但以 300 − 500 nm min−1 的高生长速率获得了 [00l] 取向的 β-NaGaO2 薄膜。薄膜中Ga和Na的原子比与前驱体溶液中的相同；这与使用溅射或蒸发生长的薄膜形成对比，其中Na的浓度明显小于源材料中的浓度。这表明，与溅射和蒸发相比，喷雾热解法由于其较低的沉积温度和较高的生长气氛压力，可以克服薄膜中高蒸气压钠成分的缺乏。由于所得薄膜的化学成分受前驱体溶液的化学成分控制，因此喷雾热解技术适合生长薄膜，特别是含有高蒸气压成分（例如Na和Na2O）的材料。
β-NaGaO2thin films used as a precursor for thin films of β-CuGaO2, which is a safe and environment-friendly thin-film solar cell material, are grown using the ultrasonic spray pyrolysis technique employing precursor aqueous solutions dissolving oxide and hydroxide. While the morphology of the obtained films was dependent on the preheating temperature of the precursor solution droplet, [00l]-oriented β-NaGaO2thin films were obtained at a high growth rate of 300 − 500 nm min−1. The atomic ratios of Ga and Na in the films are the same as those in the precursor solution; this is in contrast with the thin films grown using sputtering or evaporation where the concentration of Na is significantly smaller than that in the source material. This indicates that the spray pyrolysis method can overcome the lack of the high-vapor-pressure sodium component in films owing to its lower deposition temperature and higher pressure of the growth atmosphere compared to the sputtering and evaporation. As the chemical composition of the resultant film is controlled by that of the precursor solution, the spray pyrolysis technique is suitable for growing thin films, particularly for materials that include components with high vapor pressure such as Na and Na2O.