Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets
Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets
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脉冲超音速自由射流生长 Si/3C–SiC/Si(100) 异质结构
DOI：
10.1063/1.125512
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发表时间：
1999
影响因子：
4
通讯作者：
T. Motooka
中科院分区：
文献类型：
--
作者：
Y. Ikoma;T. Endo;F. Watanabe;T. Motooka
本文研究了以甲基硅烷（CH3SiH3）生长SiC和三硅烷（Si3H8）脉冲超音速自由射流生长Si/ 3a - SiC/Si（100）多层结构的外延生长。外延硅层只能在非常薄（≈3 nm）的3C-SiC外延层上生长，而多晶硅则生长在较厚的3C-SiC外延层上。通过高分辨率透射电镜观察，还发现在外延3C-SiC和Si层的界面处存在厚度约为1 nm的过渡区。这些结果表明，3C-SiC层的表面粗糙度和厚度对Si的外延生长起着重要的作用。
We have investigated the epitaxial growth of multilayer structures of Si/3C–SiC/Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3) for SiC growth and trisilane (Si3H8) for Si growth. Epitaxial Si layers were obtained only on very thin (≈3 nm) 3C–SiC epitaxial layers, while polycrystalline Si was grown on thicker 3C–SiC layers. It was also found that the transition regions with a thickness of ≈1 nm existed at the interface between epitaxial 3C–SiC and Si layers by high-resolution transmission electron microscopy observation. These results suggest that the surface roughness and thickness of the 3C–SiC layer play an important role for epitaxial growth of Si.