A 0.4-6GHz CMOS Tunable Load with Independent Q Tuning for 5G Filtering Applications
A 0.4-6GHz CMOS Tunable Load with Independent Q Tuning for 5G Filtering Applications
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适用于 5G 滤波应用的具有独立 Q 调谐的 0.4-6GHz CMOS 可调谐负载
DOI：
10.1049/ic.2017.0007
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Gamlath C
中科院分区：
文献类型：
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作者：
Gamlath C
提出了一种高阻抗、高Q可调负载的设计，工作频率在400MHz到接近6GHz之间。通过使用具有多个可调电容的有源电感器谐振器，可以使带宽独立于载波频率可调。 Q 因子的可调范围为 40 至 300。该电路针对需要窄带滤波的 5G 宽带应用，其中中心频率和带宽都需要可调。该电路阻抗应用于标准 CMOS 共源共栅的输出级，结果表明可以在接近 6GHz 的频率下实现高 Q 值，在距中心频率偏移 20MHz 时具有 11dB 的抑制能力。该电路架构利用了当前基于微机电系统 (MEMS) 和钛酸锶钡 (BST) 的低成本、小面积可调电容器。
The design of a high impedance, high Q tunable load is presented with operating frequency between 400MHz and close to 6GHz. The bandwidth is made independently tunable of the carrier frequency by using an active inductor resonator with multiple tunable capacitances. The Q factor can be tuned from a value 40 up to 300. The circuit is targeted at 5G wideband applications requiring narrow band filtering where both centre frequency and bandwidth needs to be tunable. The circuit impedance is applied to the output stage of a standard CMOS cascode and results show that high Q factors can be achieved close to 6GHz with 11dB rejection at 20MHz offset from the centre frequency. The circuit architecture takes advantage of currently available low cost, low area tunable capacitors based on micro-electromechanical systems (MEMS) and Barium Strontium Titanate (BST).