Modulation of electronic and magnetic properties of monolayer chromium trihalides by alloy and strain engineering

Modulation of electronic and magnetic properties of monolayer chromium trihalides by alloy and strain engineering
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通过合金和应变工程调节单层三卤化铬的电子和磁性能

DOI:
10.1063/5.0045893
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发表时间:
2021-04
影响因子:
3.2
通讯作者:
Cheng Yingchun
Cheng Yingchun
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Wang Qian;Han Nannan;Zhang Xuyang;Zhang Chenhui;Zhang Xixiang;Cheng Yingchun

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单层 CrI3 是一种罕见的铁磁半导体,具有固有的长程磁序,这使其成为自旋电子器件中具有巨大潜力的材料 [Song et al., Science 360​​, 1214 (2018)]。为了扩展单层 CrI3 在柔性器件中的应用,对其电子和磁性能的调节非常重要。在这里,我们通过第一性原理计算研究了应变和合金对单层 CrI3 性能的综合影响。由于与 CrX3 (X = Br, I) 相似的原子构型和性质,选择 Br 作为合金元素,并通过同时改变面内晶格常数 (a 和 b) 来施加应变。我们发现单层 Cr2I6−xBrx 的带隙可以极大地调节,而单层 Cr2I6−xBrx 的磁矩在不同应变和 Br 浓度下调节很小。单层 Cr2I6−xBrx 在应变下的这种独特性质使其成为柔性自旋电子器件的良好候选者。
Monolayer CrI3 is a rare ferromagnetic semiconductor with intrinsic long-range magnetic order, which makes it a great potential material in spintronic devices [Song et al., Science 360, 1214 (2018)]. To extend the applications of monolayer CrI3 in flexible devices, the modulation of its electronic and magnetic properties is important. Here, we investigated the combined effect of strain and alloy on the properties of monolayer CrI3 by first-principles calculations. Br is chosen as the alloyed element due to the similar atomic configuration and property of CrX3 (X = Br, I), and the strain is applied by simultaneously changing the in-plane lattice constants (a and b). We find that the bandgap of monolayer Cr2I6−xBrx can be tuned greatly, while the magnetic moment of monolayer Cr2I6−xBrx is regulated very little under different strain and Br concentration. This unique property of monolayer Cr2I6−xBrx under strain makes it a good candidate for the flexible spintronic devices.
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