Coexistence of two types of metal filaments in oxide memristors
Coexistence of two types of metal filaments in oxide memristors
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DOI：
10.1063/1.4976108
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发表时间：
2017-02
期刊：
影响因子：
1.6
通讯作者：
Dezhi Xu;X. Shangguan;Shumin Wang;H. Cao;L. Liang;Hongliang Zhang;Junhua Gao;W. Long;J. R. Wa
中科院分区：
文献类型：
--
作者：
Dezhi Xu;X. Shangguan;Shumin Wang;H. Cao;L. Liang;Hongliang Zhang;Junhua Gao;W. Long;J. R. Wa
人们通常认为ZnO基价态变化忆阻器（VCM）中的导电细丝是氧空位的聚集体。最近，透射电子显微镜观察表明，灯丝是由Zn为主的ZnOx。在这项研究中，仔细分析的ON状态电阻的温度依赖性表明，锌丝的形成/破裂是负责在ZnO VCM的电阻开关。通过形成包括Cu、Zn的不同金属丝以及这两种丝的共存，Cu/ZnO/Pt忆阻器件可以在VCM和ECM（电化学金属化忆阻器）模式下操作。设备操作可以在ECM和VCM模式之间可逆切换。Cu/ZnO/Pt的双模操作能力为构建忆阻交叉结构提供了广泛的选择器件。
One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures.