GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion

GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion
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用于 UHF DC/DC 功率转换的 GaN HEMT 类 ${hbox{E}}^{2}$ 谐振拓扑

DOI:
10.1109/tmtt.2012.2222043
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发表时间:
2012
影响因子:
4.3
通讯作者:
M. de las Nieves Ruíz Lavin
M. de las Nieves Ruíz Lavin
中科院分区:
工程技术1区
文献类型:
--
作者:
J. A. Garcia;R. Marante;M. de las Nieves Ruíz Lavin

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本文研究了用于特高频直流功率转换的E2级谐振拓扑结构的设计和性能。将射频氮化镓HEMT器件用于逆变器和同步整流器,结合高q集总元终端网络,可以获得超过70%的峰值效率值。基于载波爆破、开关调频或同相的控制策略也被证明是可行的。利用其改进的动态响应,与低频更传统的开关模式转换器相比,EDGE标准的E3级极性发射器已经设计并测试了770 MHz,通过基于rf的振幅和相位构成支路,在4.3 W输出功率下提供超过46%的平均全球效率。最后,探讨了这种高工作频率在功率密度方面的潜力,在1 ghz设计方法中吸收了原始LC系列互连网络中不希望的线圈寄生。
In this paper, the design and performance of class E2 resonant topologies for dc/dc power conversion at UHFs are considered. Combining the use of RF gallium-nitride HEMT devices, both for the inverter and synchronous rectifier, with high-Q lumped-element terminating networks, peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low-frequency more traditional switched-mode converters, a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches. Finally, the potential of such a high frequency of operation in terms of power density is explored, absorbing undesired coil parasitics for the original LC series interconnecting network in a 1-GHz design methodology.
具有单射频扼流圈核心的相控 E^2 类 DC/DC 转换器
DOI: --
发表时间: 2006
期刊: Proceedings of 2006 RISP International Workshop on Nonlinear Circuit and Signal Processing
影响因子: --
作者:
Hiroo Sekiya;渡辺 貴之;江沢 徹;Motoki Katayama;江沢 徹;片山 幹;関屋 大雄;関屋 大雄;関屋 大雄;Hiroo Sekiya;Takahiro Negishi;Hiroyuki Hase;Hiroo Sekiya;Motoki Katayama;Motoki Katayama;根岸 高弘;関屋 大雄;Hiroo Sekiya;Hiroo Sekiya;Hiroo Sekiya;Tsutomu Asano
通讯作者: Tsutomu Asano