GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion
GaN HEMT Class ${\hbox{E}}^{2}$ Resonant Topologies for UHF DC/DC Power Conversion
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用于 UHF DC/DC 功率转换的 GaN HEMT 类 ${hbox{E}}^{2}$ 谐振拓扑
DOI:
10.1109/tmtt.2012.2222043
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发表时间:
2012
影响因子:
4.3
通讯作者:
M. de las Nieves Ruíz Lavin
中科院分区:
文献类型:
--
作者:
J. A. Garcia;R. Marante;M. de las Nieves Ruíz Lavin
In this paper, the design and performance of class E2 resonant topologies for dc/dc power conversion at UHFs are considered. Combining the use of RF gallium-nitride HEMT devices, both for the inverter and synchronous rectifier, with high-Q lumped-element terminating networks, peak efficiency values over 70% may be obtained. Control strategies based on carrier bursting, switching frequency modulation, or outphasing are also shown to be feasible. Taking advantage of their improved dynamic response, when compared to low-frequency more traditional switched-mode converters, a class E3 polar transmitter for the EDGE standard has been designed and tested at 770 MHz, offering an average global efficiency over 46% at 4.3 W of output power, through RF-based amplitude and phase constituting branches. Finally, the potential of such a high frequency of operation in terms of power density is explored, absorbing undesired coil parasitics for the original LC series interconnecting network in a 1-GHz design methodology.
DOI:
--
发表时间:
2006
期刊:
Proceedings of 2006 RISP International Workshop on Nonlinear Circuit and Signal Processing
影响因子:
--
作者:
Hiroo Sekiya;渡辺 貴之;江沢 徹;Motoki Katayama;江沢 徹;片山 幹;関屋 大雄;関屋 大雄;関屋 大雄;Hiroo Sekiya;Takahiro Negishi;Hiroyuki Hase;Hiroo Sekiya;Motoki Katayama;Motoki Katayama;根岸 高弘;関屋 大雄;Hiroo Sekiya;Hiroo Sekiya;Hiroo Sekiya;Tsutomu Asano
通讯作者:
Tsutomu Asano