Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high‐energy electron diffraction
Distributions of growth rates on patterned surfaces measured by scanning microprobe reflection high‐energy electron diffraction
复制标题
通过扫描微探针反射高能电子衍射测量图案表面的生长速率分布
DOI：
10.1116/1.584997
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发表时间：
1990
影响因子：
1.4
通讯作者：
Y. Katayama
中科院分区：
文献类型：
--
作者：
M. Hata;T. Isu;A. Watanabe;Y. Katayama
在分子束外延生长过程中，通过扫描微探针反射高能电子衍射实时测量靠近 (111)A 和 (111)B 表面的 GaAs(001) 层生长速率的微观分布。观察到(111)A表面边缘附近的GaAs(001)表面上的生长速率增加，并且发现(111)B表面边缘附近的GaAs(001)表面上的生长速率减小。生长速率随距边缘距离的指数变化反映了 Ga 原子的表面扩散。在 560°C 时，沿 [110] 和 [110] 方向的扩散长度估计分别约为 1 和 8 μm。
Microscopic distributions of growth rates on GaAs(001) layers next to (111)A and (111)B surfaces were measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high‐energy electron diffraction. The increase in the growth rate on the GaAs(001) surface near the edge of (111)A surfaces is observed and the decrease in the growth rate on the GaAs(001) surface near the edge of the (111)B surfaces is found out. The exponential variation of the growth rate as a function of the distance from the edge, reflects surface diffusion of Ga atoms. The diffusion lengths along the [110] and [110] directions are estimated to be about 1 and 8 μm at 560 °C, respectively.