Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy
Spatial and temporal luminescence dynamics in an InxGa1−xN single quantum well probed by near-field optical microscopy
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通过近场光学显微镜探测 InxGa1−xN 单量子阱中的空间和时间发光动力学
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
T. Mukai
中科院分区：
文献类型：
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作者：
A. Kaneta;K. Okamoto;Y. Kawakami;S. Fujita;Giichi Marutsuki;Y. Narukawa;T. Mukai
利用扫描近场光学显微镜（SNOM），在18 K的光照采集模式下，研究了InxGa 1 −xN单量子阱（SQW）结构中光致发光（PL）的空间分布及其光谱、空间和时间分辨率.近场光致发光图像揭示了光致发光光谱的强度和峰值能量随探测位置的变化，其尺度小于百分之几纳米。PL线宽，其值约为60 meV的宏观PL，是小到11.6 meV，如果孔径尺寸减小到30 nm。PL强度与峰值波长之间存在明显的空间相关性，强PL强度区域对应于长波长区域。时间分辨的SNOM-PL研究显示了支持载流子扩散到电势极小值模型的关键证据。
Spatial distribution of photoluminescence (PL) with spectral, spatial, and/or time resolution has been assessed in an InxGa1−xN single-quantum-well (SQW) structure using scanning near-field optical microscope (SNOM) under illumination-collection mode at 18 K. The near-field PL images revealed the variation of both intensity and peak energy in PL spectra according to the probing location with the scale less than a few hundredths of a nanometer. PL linewidth, the value of which was about 60 meV in macroscopic PL, was as small as 11.6 meV if the aperture size was reduced to 30 nm. Clear spatial correlation was observed between PL intensity and peak wavelength, where the regions of strong PL intensity correspond to those of long wavelength. Time-resolved SNOM–PL study showed the critical evidence that supports the model of diffusion of carriers to potential minima.