Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers
Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers
复制标题
DOI：
10.1103/physrevb.78.233303
复制
发表时间：
2008-12
影响因子：
3.7
通讯作者：
M. Ueda;M. Funato;K. Kojima;Y. Kawakami;Y. Narukawa;T. Mukai
中科院分区：
文献类型：
--
作者：
M. Ueda;M. Funato;K. Kojima;Y. Kawakami;Y. Narukawa;T. Mukai
报道了利用半极性(CID：3)112‘2(CID：4)平面在InxGa1−xN/GaN量子阱有源层中观察到的光偏振开关现象。当In组分小于(Cid：5)30%时，与先前的研究类似，与顶部和第二价带相关的发射分别沿(Cid：6)11‘00(Cid：7)和垂直(Cid：6)1’1‘23(Cid：7)方向极化。相反，当In组分增加到30%以上时，极化发生切换，表明两个价带之间发生了交叉。由于偏振度对势垒宽度的敏感度较低，观察到的偏振开关归因于InN形变势。
We report the observation of optical polarization switching in In x Ga 1− x N / GaN quantum well active layers, using semipolar (cid:3) 112 ¯ 2 (cid:4) planes. When the In composition is less than (cid:5) 30 % , the emissions related to the top and second valence bands are polarized along the (cid:6) 11 ¯ 00 (cid:7) and perpendicular (cid:6) 1 ¯ 1 ¯ 23 (cid:7) directions, respectively, similar to earlier studies. On the contrary, as the In composition increases above 30%, the polarizations switch, indicating a crossover between the two valence bands. Because the polarization degree is less sensitive to the well width, the observed polarization switch is ascribed to the InN deformation potentials.