Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes
Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes
复制标题
AlGaAsSb和AlInAsSb雪崩光电二极管雪崩击穿的温度依赖性
DOI：
10.1109/jlt.2022.3185417
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发表时间：
2022-09-01
影响因子：
4.7
通讯作者：
Campbell, Joe C.
中科院分区：
文献类型：
--
作者：
Guo, Bingtian;Ahmed, Sheikh Z.;Campbell, Joe C.
数字合金Al0.85Ga0.15As0.56Sb0.44、随机合金Al0.85Ga0.15As0.56Sb0.44和随机合金Al0.79In0.21As0.74Sb0.26由于其低的过剩噪声，有望成为雪崩光电二极管(APD)倍增区的候选材料，与Si APD相当。通过测量倍增增益，研究了这些材料中雪崩击穿的温度依赖性。观察到击穿电压与温度的弱相关性，这是降低光接收器中温度或反向偏置控制电路的复杂性所必需的。合金无序势和合金散射率的计算表明，这些四元合金雪崩击穿的温度依赖性归因于大质量变化和高合金散射对声子散射的主导地位。碰撞电离还会受到带隙能量的温度依赖关系的影响，这会影响电离阈值能量。因此，我们通过温度依赖的光致发光和外部量子效率测量研究了带隙能量的温度依赖关系，以进一步解释这些材料的温度依赖击穿特性。
Digital alloy Al0.85Ga0.15As0.56Sb0.44, random alloy Al0.85Ga0.15As0.56Sb0.44, and random alloy Al0.79In0.21As0.74Sb0.26 are promising candidates for the multiplication regions of avalanche photodiodes (APDs) due to their low excess noise, which is comparable to that of Si APDs. The temperature dependence of avalanche breakdown in these materials has been investigated by measuring the multiplication gain. A weak temperature dependence of the breakdown voltage is observed, which is desirable to reduce the complexity of temperature or reverse bias control circuits in the optical receiver. Calculations of the alloy disorder potentials and alloy scattering rates indicate that the temperature dependence of the avalanche breakdown in these quaternary alloys is attributable to the dominance of large mass variations and high alloy scattering over phonon scattering. Impact ionization can also be impacted by the temperature dependence of the bandgap energy which affects the ionization threshold energy. Therefore, the temperature dependence of the bandgap energy has been investigated by temperature-dependent photoluminescence and external quantum efficiency measurements to further explain the temperature dependent breakdown characteristics of these materials.