Scanning force microscopy measurements of latent image topography in chemically amplified resists
Scanning force microscopy measurements of latent image topography in chemically amplified resists
复制标题
化学放大抗蚀剂中潜像形貌的扫描力显微镜测量
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
F. Cerrina
中科院分区：
文献类型：
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作者：
L. Ocola;D. Fryer;G. Reynolds;A. Krasnoperova;F. Cerrina
报道了曝光和未显影光刻胶的非接触式扫描力显微镜形貌测量。通过电子束直写 1 μm 线形光栅和 5 mm 焊盘对负性化学放大光刻胶 SAL605 进行图案化。已曝光的未烘烤抗蚀剂的浮雕图像已观察到几埃的量级，然后作为曝光后时间的函数进行监测。该浮雕图像通过曝光后烘烤 (PEB) 进行形貌变换，在曝光与未曝光区域界面处产生一个脊，垂直延伸几纳米，横向延伸约一微米。该效应已作为 PEB 时间和暴露剂量的函数进行了研究。讨论了观察到的现象与光学膜厚监测技术以及先前报道的曝光和 PEB 期间光刻胶化学变化数据的相关性。确定了有助于图像形成的两个独立机制。数据显示，当地化学...
Noncontact scanning force microscopy topography measurements of exposed and undeveloped photoresists are reported. A negative chemically amplified photoresist, SAL605, was patterned by electron beam direct writing of 1 μm line linear gratings, and 5 mm pads. A relief image of exposed unbaked resist has been observed of the order of a few A, and then monitored as a function of time after exposure. This relief image undergoes a topography transformation with postexposure bake (PEB), yielding a ridge located at the exposed–unexposed region interface, extending several nanometers in vertical and about one micrometer laterally. The effect has been investigated as a function of PEB time and exposure dose. Correlations of the observed phenomena with optical film thickness monitoring techniques and previously reported data on the photoresist chemical changes during exposure and PEB are discussed. Two independent mechanisms contributing to the image formation are identified. The data show that the local chemistry ...